Preliminary Results of InGaAsN/GaAs Quantum-well laser Diodes Emitting towards 1.3 µm
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IMST018.pdf
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605.4 KB
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Checksum (MD5)
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Author(s)
Wang, S.Z.
Yoon, Soon Fatt
Date Issued
January 2003
Series/Report no.
Innovation in Manufacturing Systems and Technology (IMST);
Abstract
GaAs-based nitride is found to be sensitive to growth conditions and ex-situ annealing processes. The critical thickness is almost one order thicker than the theoretical prediction by force balance model. The growth process could be sped up by the nitrogen incorporation itself, while the nitrogen incorporation could be affected by Beryllium doping. The incorporated nitrogen atoms partly occupy substitutional sites for Arsenic. Some nitrogen atoms are at interstitial sites. Annealing could drastically increase the optical quality of GaAs-based nitrides. As an end of this paper, some preliminary results of InGaAsN/GaAsN/AlGaAs laser diodes are also presented.
Subjects
InGaAsN/GaAs
quantum well
molecular beam epitaxy
laser diode
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