Nodal photolithography : lithography via far-field optical nodes in the resist
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244105802-MIT.pdf
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Author(s)
Winston, Donald, S.M. Massachusetts Institute of Technology
Advisor(s)
Karl K. Berggren.
Date Issued
2008
Publisher
Massachusetts Institute of Technology
Abstract
In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable optical transitions in certain photoresist compounds. After addressing prior work in resolution enhancement via optical nodes (for metastable atom localization, reversible absorbance modulation, and fluorescence microscopy), I examine the issues of resist formulation, optical pulse width bounds due to resist kinetics, and patterning schemes for low- and high-volume throughput. The experimental realization of stimulated emission depletion is described, and challenges for lithography using this technique are discussed.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (p. 53-54).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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