Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel
Name
666447099-MIT.pdf
Description
Full printable version
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27.24 MB
Format
Adobe PDF
Checksum (MD5)
febdaf419af72ccb201a7af1615efc84
Author(s)
Reina Ceeco, Alfonso
Advisor(s)
Jing Kong.
Date Issued
2010
Publisher
Massachusetts Institute of Technology
Abstract
An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene can be transferred from the Ni surface to dielectric substrates in order to integrate them to graphene device prototypes. Uniform single layer graphene can be grown with the same process by using single crystalline Ni with a (111) surface orientation. Raman spectroscopy and electron diffraction characterization is undertaken in order to determine the nature of the layer stacking for the case of multilayer graphene.
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010.
Includes bibliographical references (p. 169-177).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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