Purity matters : enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content
Name
952421832-MIT.pdf
Description
Full printable version
Size
14.1 MB
Format
Adobe PDF
Checksum (MD5)
0e7e919a20b5f0cfb03144c503e88242
Author(s)
Polizzotti, Alex J
Advisor(s)
Tonio Buonassisi.
Alternative Title
Enhancing carrier transport properties in tin sulfide for photovoltaic applications by reducing impurity content.
Date Issued
2016
Publisher
Massachusetts Institute of Technology
Abstract
Tin sulfide (SnS), a potential p-type absorber material for photovoltaic applications, is hampered by poor carrier-transport properties, particularly minority-carrier lifetime. This study investigates the role of intrinsic and extrinsic crystallographic point defects on the electronic transport properties of SnS. High-purity SnS is grown via sulfurization of tin films, and compared with baseline material made from feedstock with two orders of magnitude higher impurity content. Minority-carrier lifetime, morphology, and impurity content are analyzed in both materials. It is shown that improving feedstock purity by two orders of magnitude results in an improvement to minority-carrier lifetime from under 100 ps to over 2 ns. Simulations suggest that this increase in minority-carrier lifetime could lead to device efficiency improvements.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2016.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 81-85).
Subjects
Mechanical Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Terms of Use
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