Gallium Nitride electronics for cryogenic and high frequency applications
Name
1192966396-MIT.pdf
Size
6.27 MB
Format
Adobe PDF
Checksum (MD5)
c84e38c4ca7d1fac76a7e3cbbc052bed
Author(s)
Xie, Qingyun,S.M.Massachusetts Institute of Technology.
Advisor(s)
Tomás Palacios.
Date Issued
2020
Publisher
Massachusetts Institute of Technology
Abstract
Cryogenic and high frequency electronics have received renewed attention due to their application in the control and readout electronics of quantum computing systems, among others. The potential of AlGaN/GaN HEMTs for cryogenic high frequency application was explored. The performance of AlGaN/GaN HEMTs with both conventional gate material (Ni/Au) and superconducting gate material (NbN) was studied at cryogenic temperature. Furthermore, in order to study device-circuit interaction of the devices, a simulation framework bridging the device-level and circuit-level was developed. The framework was tested on two device concepts, namely GaN p-channel FETs for complementary logic application and the vertical fin transistor for high power RF application.
Description
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, May, 2020
Cataloged from the official PDF of thesis.
Includes bibliographical references (pages 75-88).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
MIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.
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