Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations
Name
Chen_Thermal interface.pdf
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Author(s)
Yang, Nuo
Luo, Tengfei
Esfarjani, Keivan
Henry, Asegun
Tian, Zhiting
Shiomi, Junichiro
Chalopin, Yann
Li, Baowen
Chen, Gang
Date Issued
February 2015
Journal
Journal of Computational and Theoretical Nanoscience
Publisher
American Scientific Publishers
Citation
Yang, Nuo, Tengfei Luo, Keivan Esfarjani, Asegun Henry, Zhiting Tian, Junichiro Shiomi, Yann Chalopin, Baowen Li, and Gang Chen. “Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations.” Journal of Computational and Theoretical Nanoscience 12, no. 2 (February 1, 2015): 168–74.
Version
Original manuscript
Abstract
The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1166/jctn.2015.3710
