Gamma radiation effects in amorphous silicon and silicon nitride photonic devices
Name
Gamma radiation effects in amorphous silicon and silicon nitride photonic devices.pdf
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781.59 KB
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Checksum (MD5)
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Author(s)
Du, Qingyang
Huang, Yizhong
Ogbuu, Okechukwu
Zhang, Wei
Li, Junying
Singh, Vivek
Agarwal, Anuradha
Hu, Juejun
Date Issued
January 2017
Journal
Optics Letters
Publisher
Optical Society of America
Citation
Du, Qingyang et al. “Gamma Radiation Effects in Amorphous Silicon and Silicon Nitride Photonic Devices.” Optics Letters 42, 3 (January 2017): 587-590 © 2017 Optical Society of America
Version
Original manuscript
Abstract
Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10⁻³ in amorphous silicon and 5×10⁻⁴ in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1364/OL.42.000587
