A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
Name
Joh-2009-A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.pdf
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308.88 KB
Format
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Checksum (MD5)
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Author(s)
Joh, Jungwoo
del Alamo, Jesus A.
Alternative Title
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
Date Issued
March 2008
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Jungwoo Joh, and J.A. del Alamo. “Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors.” Electron Device Letters, IEEE 29.4 (2008): 287-289. © 2008 IEEE
Version
Final published version
Abstract
We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and high-power state than at VDS = 0. In addition, as |VGS| increases, the critical voltage decreases. We have also found that the stress current does not affect the critical voltage although soft degradation at low voltages takes place at high stress currents. All of our findings are consistent with a degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effect. Hot-electron-based mechanisms seem to be in contradiction with our experimental results.
Subjects
DC stress
GaN
degradation
high-electron mobility transistor (HEMT)
reliability
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/LED.2008.917815
