Magnetic properties of lithographically patterned thin film magnetic elements for magnetic random access memory applications
Name
54764035-MIT.pdf
Description
Full printable version
Size
13.32 MB
Format
Adobe PDF
Checksum (MD5)
7a05e2bc44f421a52dc11d0257964986
Author(s)
Hao, Yaowu, 1969-
Advisor(s)
Caroline A. Ross.
Date Issued
2003
Publisher
Massachusetts Institute of Technology
Abstract
Interference lithography, together with ion beam etching or lift-off processes, has been utilized to produce large area periodic rectangular patterns. Single layer Co, NiFe, and multilayer Co/Cu/NiFe pseudo spin valve films have been patterned into series of element arrays with different sizes. With the aim of assessing the behavior of future magnetic random access memory (MRAM) devices, the magnetic properties of the patterned elements, including magnetization switching mechanisms, switching field distribution, magnetic thermal stability, and magnetostatic interactions, have been studied using magnetic force microscopy (MFM), SQUID magnetometer, alternating gradient magnetometer (AGM) and vibrating sample magnetometer (VSM). The measured results have been compared with the theoretical shape anisotropy theory to try finding a guideline for controlling magnetic properties of patterned elements.
Description
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Includes bibliographical references (p. 133-139).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
Persistent DSpace Link
