AlN-AlN Layer Bonding and Its Thermal Characteristics
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Fitzgerald_AIN-AIN layer.pdf
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1.07 MB
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Author(s)
Bao, S.
Lee, K. H.
Chong, G. Y.
Tan, C. S.
Fitzgerald, Eugene A.
Date Issued
April 2015
Journal
ECS Journal of Solid State Science and Technology
Publisher
Electrochemical Society
Citation
Bao, S., K. H. Lee, G. Y. Chong, E. A. Fitzgerald, and C. S. Tan. “AlN-AlN Layer Bonding and Its Thermal Characteristics.” ECS Journal of Solid State Science and Technology 4, no. 7 (April 24, 2015): P200–P205.
Version
Final published version
Abstract
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. After activation, substoichiometric nitrogen bound to aluminum, Al-O and Al-OH bonds were found at the thin film surface. The as-bonded wafer pairs are nearly void and particle free with a high bonding strength of 1527.8 ± 272.2 mJ/m[superscript 2], enabling them to withstand the subsequent process steps. In addition, experimental results have indicated that the AlN-AlN bonded wafers can achieve a 23 and 16% improvement respectively in terms of heat dissipation compared with those using SiO[subscript 2] and Al[subscript 2]O[subscript 3] as the bonding layer. It is concluded that this AlN-AlN bonded wafer pairs can exhibit a better heat dissipation capability than other bonded counterparts.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1149/2.0121507jss
