Ultralow-noise packaged 1.55-m semiconductor external-cavity laser with 0.37-W output power
Name
Juodawlkis-2009-Ultralow-noise packaged 1.55-m semiconductor external-cavity laser with 0.37-W output power.pdf
Size
344.68 KB
Format
Adobe PDF
Checksum (MD5)
580477e325018dfb45620cce6a1c504c
Author(s)
Juodawlkis, Paul W.
Loh, William
O'Donnell, Frederick J.
Brattain, Michael A.
Plant, Jason J.
Date Issued
August 2009
Journal
Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Juodawlkis, P.W. et al. “Ultralow-noise packaged 1.55-µm semiconductor external-cavity laser with 0.37-W output power.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum Electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2.
Version
Final published version
Abstract
We demonstrate a semiconductor external-cavity laser comprising a slab-coupled optical waveguide amplifier (SCOWA) and a fiber Bragg grating. The laser exhibits a Lorentzian linewidth of 1.75 kHz and a sidemode suppression ratio > 80 dB.
Subjects
(140.3570) Lasers, single-mode
(250.5980) Semiconductor optical amplifiers
(300.3700) Linewidth
MIT Department
Lincoln Laboratory
Terms of Use
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