High-Q-factor Al [subscript 2]O[subscript 3] micro-trench cavities integrated with silicon nitride waveguides on silicon
Name
oe-26-9-11161.pdf
Description
Published version
Size
3.85 MB
Format
Adobe PDF
Checksum (MD5)
56853950935538cb746ef665bc90730c
Author(s)
Su, Zhan
Li, Nanxi
Frankis, Henry C.
Magden, Salih
Adam, Thomas N.
Leake, Gerald
Coolbaugh, Douglas
Bradley, Jonathan D. B.
Watts, Michael
Date Issued
April 2018
Journal
Optics Express
Publisher
The Optical Society
Citation
Su, Zhan, et al. “High-Q-Factor Al 2 O 3 Micro-Trench Cavities Integrated with Silicon Nitride Waveguides on Silicon.” Optics Express 26, 9 (April 2018): 11161. © 2018 Optical Society of America
Version
Final published version
Abstract
We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step. We examine the theoretical and experimental optical properties of the aluminum oxide micro-trench cavities for different bend radii, film thicknesses and near-infrared wavelengths and demonstrate experimental Q factors of > 10[superscript 6]. We propose that this high-Q micro-trench cavity design can be applied to incorporate a wide variety of novel microcavity materials, including rare-earth-doped films for microlasers, into wafer-scale silicon photonics platforms.
MIT Department
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Earth, Atmospheric, and Planetary Sciences
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1364/OE.26.011161
