Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition
Name
Hsu-2009-Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition.pdf
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Author(s)
Hsu, Allen Long
Hu, Qing
Williams, Benjamin
Date Issued
August 2009
Journal
Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Hsu, A., Qing Hu, and B. Williams. “Four-well highly strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. 1-2. ©2009 IEEE.
Version
Final published version
Abstract
We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5225369&tag=1
