CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)
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DRC 2014 - Zhihong_Low temp ohmic_v3A.pdf
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Author(s)
Liu, Zhihong
Heuken, Michael
Fahle, Dirk
Ng, G. I.
Palacios, Tomas
Date Issued
August 2014
Journal
2014 72nd Device Research Conference
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Zhihong, et al. "CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)." 2014 72nd Device Research Conference, 22-25 June, 2014, Santa Barbara, California, IEEE, 2014, pp. 75–76.
Version
Author's final manuscript
Abstract
Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need annealing at > 800°C. In the past, we have reported an approach to realize low contact resistance (R[subscript C]) using CMOS-compatible metal schemes annealed at 500°C through an n[superscript +]-GaN/n-AlGaN/GaN structure [4]. This method has a drawback that the n-doped AlGaN barrier increases the gate leakage current. In this work, we present the first low temperature (< 450°C) CMOS-compatible Ti/Al ohmic contact technology for conventional unintentionally-doped AlGaN/AlN/GaN HEMT structures.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Singapore-MIT Alliance in Research and Technology (SMART)
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DOI of Published Version
https://doi.org/10.1109/DRC.2014.6872304
