Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al
Name
PhysRevB.91.094409.pdf
Size
855.91 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Jamer, Michelle E.
Assaf, Badih A.
Sterbinsky, G. E.
Arena, D.
Lewis, L. H.
Radtke, G.
Heiman, D.
Saul, Alberto Andres
Date Issued
March 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Jamer, M. E. et al. “Antiferromagnetic Phase of the Gapless Semiconductor V[subscript 3]Al.” Physical Review B 91.9 (March 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.
MIT Department
Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.91.094409
