Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
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Author(s)
Tan, Yew Heng
Lee, Kwang Hong
Jandl, Adam Christopher
Fitzgerald, Eugene A
Tan, Chuan Seng
Date Issued
March 2013
Journal
Journal of Electronic Materials
Publisher
Springer US
Citation
Lee, Kwang Hong, Yew Heng Tan, Adam Jandl, Eugene A. Fitzgerald, and Chuan Seng Tan. “Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut.” Journal of Electronic Materials 42, no. 6 (March 26, 2013): 1133–1139.
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Author's final manuscript
Abstract
The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0° offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6° offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6° offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6° offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Singapore-MIT Alliance in Research and Technology (SMART)
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Creative Commons Attribution-Noncommercial-Share Alike
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DOI of Published Version
https://doi.org/10.1007/s11664-013-2538-7
