Wet-based digital etching on GaN and AlGaN
Name
APL21-AR-UWBG2022-08564.pdf
Size
1.1 MB
Format
Adobe PDF
Checksum (MD5)
4466055cf153a02f7909a6a2aee6d534
Author(s)
Shih, Pao-Chuan
Engel, Zachary
Ahmad, Habib
Doolittle, William Alan
Palacios, Tomás
Date Issued
January 10, 2022
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan and Palacios, Tomás. 2022. "Wet-based digital etching on GaN and AlGaN." Applied Physics Letters, 120 (2).
Version
Author's final manuscript
Subjects
Physics and Astronomy (miscellaneous)
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/5.0074443
