Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
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Palacios_Evidence for impact.pdf
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Author(s)
Palacios, Tomas
Killat, Nicole
Tapajna, Milan
Faqir, Mustapha
Kuball, Martin
Date Issued
March 2011
Journal
Electronics Letters
Publisher
Institution of Electrical Engineers (IEE)
Citation
Killat, N. et al. “Evidence for Impact Ionisation in AlGaN/GaN HEMTs with InGaN Back-barrier.” Electronics Letters 47.6 (2011): 405.
Version
Author's final manuscript
Abstract
Electroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
https://doi.org/10.1049/el.2010.7540
