Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium
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Fitzgerald_Free-standing alx.pdf
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Author(s)
Cole, Garrett D.
Bai, Yu
Aspelmeyer, Markus
Fitzgerald, Eugene A.
Date Issued
June 2010
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Cole, Garrett D., Yu Bai, Markus Aspelmeyer, and Eugene A. Fitzgerald. “Free-standing Al[sub x]Ga[sub 1−x]As heterostructures by gas-phase etching of germanium.” Applied Physics Letters 96, no. 26 (2010): 261102. © 2010 American Institute of Physics
Version
Final published version
Abstract
We outline a facile fabrication technique for the realization of free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF[subscript 2]) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of ∼ 10[superscript 6].
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1063/1.3455104
