Ge photodetectors for Si microphotonics
Name
48171997-MIT.pdf
Description
Full printable version
Size
13.7 MB
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Checksum (MD5)
833cac8c154633dda263727103cf0287
Author(s)
Luan Hsin-Chiao, 1969-
Advisor(s)
Lionel Cooper Kimerling.
Date Issued
2001
Publisher
Massachusetts Institute of Technology
Abstract
This thesis demonstrates the integration of pure Ge near-infrared photodetectors on Si. Ge epilayers were grown directly on Si by a two-step ultra-high-vacuum/chemical-vapor-deposition (UHV/CVD) process. This work conclusively proves that threading-dislocation densities in the Ge epilayers, measured both by plan-view transmission electron microscopy and etch-pit-density (EPD) counting, were reduced by cyclic thermal annealing. Additionally, Ge mesas with no threading dislocations as measured by EPD were also demonstrated. The removal of threading-dislocations can be attributed to the thermal stress induced dislocation glide and reactions. Using the annealed Ge epilayers grown on Si, p-i-n Ge photodetectors with maximum responsivities of 770 mA/W at 1.3 μm were fabricated. Finally, to allow the integration of Ge epilayers in Si microelectronic processing, the protection and passivation of Ge was investigated. The passivation was provided by the oxidation of Si epilayers grown on Ge. Capacitance-voltage characteristics of metal-oxide-semiconductor devices demonstrated the high quality of the passivation with the measured interface state density of 4 x 1011 cm-2eV- 1.
Description
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
Includes bibliographical references (p. 143-157).
Subjects
Materials Science and Engineering.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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