Very-High-Frequency Resonant Boost Converters
Name
Pilawa-2009-Very-High-Frequency Resonant Boost Converters.pdf
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543.07 KB
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Author(s)
Perreault, David J.
Pilawa-Podgurski, Robert C. N.
Rivas, Juan M.
Sagneri, Anthony D.
Anderson, David I.
Date Issued
June 2009
Journal
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers
Citation
Pilawa-Podgurski, R. et al. “Very-High-Frequency Resonant Boost Converters.” Power Electronics, IEEE Transactions on 24.6 (2009): 1654-1665. ©2009 IEEE.
Version
Final published version
Abstract
This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/tpel.2009.2016098
