Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
Name
Fabbri-2014-Visible and Infra-red.pdf
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1.14 MB
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Adobe PDF
Checksum (MD5)
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Author(s)
Fabbri, Filippo
Rotunno, Enzo
Lazzarini, Laura
Fukata, Naoki
Salviati, Giancarlo
Date Issued
January 2014
Journal
Scientific Reports
Publisher
Nature Publishing Group
Citation
Fabbri, Filippo, Enzo Rotunno, Laura Lazzarini, Naoki Fukata, and Giancarlo Salviati. “Visible and Infra-Red Light Emission in Boron-Doped Wurtzite Silicon Nanowires.” Sci. Rep. 4 (January 8, 2014).
Version
Final published version
Abstract
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Creative Commons Attribution-Noncommercial
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DOI of Published Version
https://doi.org/10.1038/srep03603
