Shot noise in magnetic tunneling structures with two-level quantum dots
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PhysRevB.94.235429.pdf
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Author(s) • • • • • • •
Szczepański, T.
Dugaev, V. K.
Barnaś, J.
Martinez, I.
Hong, J.-Y.
Lin, M.-T.
Aliev, F. G.
Cascales Sandoval, Juan Pedro
Date Issued
December 2016
Journal
Physical Review B
Publisher
American Physical Society
Citation
Szczepański, T. et al. “Shot Noise in Magnetic Tunneling Structures with Two-Level Quantum Dots.” Physical Review B 94.23 (2016): n. pag. © 2016 American Physical Society
Version
Final published version
Abstract
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to the super-Poissonian statistics, and also depend on relative orientation of the electrodes' magnetic moments. We have also calculated the corresponding spin shot noise, which is associated with fluctuations of spin current.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.94.235429