Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
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del Alamo_Impact of.pdf
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Author(s)
del Alamo, Jesus A.
Xia, Ling
Alternative Title
Impact of <110> uniaxial strain on n-channel In[subscript 0.15]Ga[subscript 0.85]Na high electron mobility transistorsa
Date Issued
December 2009
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Xia, Ling, and Jesus A. del Alamo. “Impact of <110> uniaxial strain on n-channel In[sub 0.15]Ga[sub 0.85]As high electron mobility transistors.” Applied Physics Letters 95.24 (2009): 243504. © 2009 American Institute of Physics
Version
Final published version
Abstract
This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3273028
