Tunneling in graphene–topological insulator hybrid devices
Name
PhysRevB.92.241409.pdf
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976.42 KB
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Author(s)
Steinberg, H.
Orona, Lucas A.
Watanabe, K.
Taniguchi, T.
Fatemi, Valla
Sanchez-Yamagishi, Javier Daniel
Jarillo-Herrero, Pablo
Date Issued
December 2015
Journal
Physical Review B
Publisher
American Physical Society
Citation
Steinberg, H., L. A. Orona, V. Fatemi, J. D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero. "Tunneling in graphene–topological insulator hybrid devices." Phys. Rev. B 92, 241409 (December 2015). © 2015 American Physical Society
Version
Final published version
Abstract
Hybrid graphene–topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi[subscript 2]Se[subscript 3] exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi[subscript 2]Se[subscript 3] density of states. Similar results were obtained for BLG on top of Bi[subscript 2]Se[subscript 3], with tenfold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi[subscript 2]Se[subscript 3] and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI Γ and graphene K,K[superscript ′] points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge neutrality point is traced along the energy-density trajectory. This trajectory is used as a measure of the ground-state density of states.
MIT Department
Massachusetts Institute of Technology. Materials Processing Center
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.92.241409
