Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager
Name
FB - NSREC2017 - FINAL Full Paper Submission - CMOSIS.pdf
Description
Accepted version
Size
1.11 MB
Format
Unknown
Checksum (MD5)
5bc6e14f8d82fcb372b1cabcef607caf
Author(s)
Milanowski, Randall
Aniceto, Raichelle
Hardy, Fred
Vermeire, Bert
Jacox, Michael
Moro, Slaven
Cahoy, Kerri
Date Issued
July 2017
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Milanowski, Randall, Aniceto, Raichelle, Hardy, Fred, Vermeire, Bert, Jacox, Michael et al. 2017. "Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager."
Version
Author's final manuscript
Abstract
© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
MIT Department
Massachusetts Institute of Technology. Department of Aeronautics and Astronautics
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/nsrec.2017.8115465
