Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates
Name
Kimerling_Direct demonstration.pdf
Size
511.35 KB
Format
Adobe PDF
Checksum (MD5)
34c8f30ea53b154a9bca2bb54649d1dc
Author(s)
Vanhoutte, Michiel
Wang, Bing
Zhou, Zhiping
Michel, Jurgen
Kimerling, Lionel C.
Date Issued
September 2010
Journal
Proceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Vanhoutte, Michiel, Bing Wang, Zhiping Zhou, Jurgen Michel, and Lionel C. Kimerling. “Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates.” In 7th IEEE International Conference on Group IV Photonics, 308-310. Institute of Electrical and Electronics Engineers, 2010. © Copyright 2010 IEEE
Version
Final published version
Abstract
Sensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Microphotonics Center
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/GROUP4.2010.5643345
