Measuring Charge Transport in a Thin Solid Film Using Charge Sensing
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Kastner1.pdf
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Author(s)
MacLean, Kenneth
Mentzel, Tamar
Kastner, Marc
Date Issued
March 2010
Journal
Nano Letters
Publisher
American Chemical Society
Citation
MacLean, Kenneth, Tamar S. Mentzel, and Marc A. Kastner. “Measuring Charge Transport in a Thin Solid Film Using Charge Sensing.” Nano Letters 10.3 (2010): 1037-1040.
Version
Author's final manuscript
Abstract
We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1021/nl904280q
