Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
Name
sensors-18-00494.pdf
Size
3.82 MB
Format
Adobe PDF
Checksum (MD5)
db22469f55e6c36464db4908c33efd48
Author(s)
Mackin, Charles Edward
McVay, Elaine D.
Palacios, Tomas
Date Issued
February 2018
Journal
Sensors
Publisher
MDPI AG
Citation
“Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors.” Sensors 18, 2 (February 2018): 494 © 2018 The Authors
Version
Final published version
Abstract
This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Attribution 4.0 International (CC BY 4.0)
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.3390/s18020494
