Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
Name
163909584-MIT.pdf
Description
Full printable version
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4.46 MB
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8bb67459f0e18015e3bc8eb0c5194222
Author(s)
Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Advisor(s)
Judy L. Hoyt.
Alternative Title
Electron transport in UTB fully depleted n-MOSFETS fabricated on SSDOI with body thickness ranging from 22nm to 25 nm
Date Issued
2007
Publisher
Massachusetts Institute of Technology
Abstract
The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.
Description
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007.
Includes bibliographical references (leaves 49-53).
Subjects
Electrical Engineering and Computer Science.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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