Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
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Venus_EDL_Published.pdf
Size
9.28 MB
Format
Adobe PDF
Checksum (MD5)
7a9eb9ab10172637beff8389130de0d6
Author(s)
Yuan, Mengyang
Niroula, John
Xie, Qingyun
Rajput, Nitul S.
Fu, Kai
Luo, Shisong
Das, Sagar Kumar
Iqbal, Abdullah Jubair Bin
Sikder, Bejoy
Isamotu, Mohamed Fadil
Date Issued
July 2023
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai et al. 2023. "Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation." IEEE Electron Device Letters, 44 (7).
Version
Author's final manuscript
Subjects
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
MIT Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Terms of Use
Creative Commons Attribution-Noncommercial-Share Alike
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/led.2023.3279813
