Mobility enhancement in indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by application of <110> uniaxial strain
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del Alamo-Mobility enhancement.pdf
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Author(s)
Xia, Ling
del Alamo, Jesus A.
Alternative Title
Mobility enhancement in indium-rich N-channel InxGa1-xAs HEMTs by application of <110> uniaxial strain
Date Issued
May 2010
Journal
Proceedings of the 2010 International Conference on Indium Phosphide & Related Materials (IPRM), 22nd IPRM, May 31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan
Publisher
Institute of Electrical and Electronics Engineers
Citation
Xia, Ling, and Jesus. A. del Alamo. “Mobility Enhancement in Indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by Application of <110> Uniaxial Strain.” IEEE, Proceedings of the 2010 International Conference on Indium Phosphide & Related Materials (IPRM), 22nd IPRM, May31-June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan. 1–4. Web. ©2010 IEEE.
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Final published version
Abstract
As in Si CMOS, the incorporation of mechanical strain offers the possibility of improving the performance of III-V field effect transistors (FETs). Quantifying its potential and providing fundamental understanding of the impact of strain are the goals of this study. This paper reports an investigation of the impact of <;110> uniaxial strain on n-type InAlAs/InGaAs HEMTs with a 70% InAs channel core. The main impact of strain is found to be a modification of the electron effective mass and mobility. A comparison between the effect of <;110> strain in Si and InGaAs suggests that strain engineering can indeed be leveraged to improve transport properties in deeply scaled InGaAs FETs.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/ICIPRM.2010.5516249
