GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications
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Author(s)
Shih, P.-C.
Zheng, T.
Arellano-Jimenez, M. J.
Gnade, B.
Akinwande, Akintunde I
Palacios, T.
Date Issued
December 3, 2022
Publisher
IEEE
Citation
P. . -C. Shih, T. Zheng, M. J. Arellano-Jimenez, B. Gnade, A. I. Akinwande and T. Palacios, "GaN Field Emitter Arrays with JA of 10 A/cm2 at VGE = 50 V for Power Applications," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 9.6.1-9.6.4.
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Author's final manuscript
Abstract
III-Nitrides are attractive as field emission devices for high frequency, high power, and harsh environment applications. A wet-based digital etching and a novel device geometry was used to demonstrate GaN vertical self-alignedgate (SAG) field emitter arrays (FEA) with uniform tips of sub- 10 nm tip radius. The best GaN FEA has a current density (JA) of 10 A/cm2 at VGE = 50 V, which is better than the state-of-the-art Si field emitter arrays at the same bias condition.
Description
2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-ShareAlike
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DOI of Published Version
https://doi.org/10.1109/iedm45625.2022.10019399
