Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
Name
Palacios_Study of gate.pdf
Size
1.34 MB
Format
Adobe PDF
Checksum (MD5)
a45c8dd9dd63f25844566ae7aea5239c
Author(s)
Sun, X.
Chang-Liao, K. S.
Cui, S.
Ma, T. P.
Saadat, Omair Irfan
Palacios, Tomas
Date Issued
March 2013
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Sun, X., O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma. “Study of Gate Oxide Traps in HfO[subscript 2]/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method.” Appl. Phys. Lett. 102, no. 10 (2013): 103504. © 2013 American Institute of Physics
Version
Final published version
Abstract
We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1063/1.4795717
