Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces
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Fitzgerald_Controlling epitaxial.pdf
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Author(s)
Sharma, Prithu
Milakovich, Timothy J.
Bulsara, Mayank
Fitzgerald, Eugene A.
Date Issued
March 2013
Journal
ECS Transactions
Publisher
Electrochemical Society
Citation
Sharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces.” ECS Transactions 50, no. 9 (March 15, 2013): 333–337. © 2012 ECS - The Electrochemical Society
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Final published version
Abstract
High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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DOI of Published Version
https://doi.org/10.1149/05009.0333ecst
