Design and fabrication of one-dimensional and two-dimensional photonic bandgap devices
Name
42665211-MIT.pdf
Description
Full printable version
Size
31.65 MB
Format
Adobe PDF
Checksum (MD5)
f783507fe668c0012a4adbc29c877099
Author(s)
Lim, Kuo-Yi, 1969-
Advisor(s)
Leslie A. Kolodziejski.
Date Issued
1999
Publisher
Massachusetts Institute of Technology
Abstract
One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1-xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector ...
Description
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
Includes bibliographical references (p. 189-196).
Subjects
Electrical Engineering and Computer Science
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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