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Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications
Name
acsanm.8b00707.pdf
Description
Accepted version
Size
9.08 MB
Format
Adobe PDF
Checksum (MD5)
6f9fb8d288a81f45a2b20fe8853b3214
Author(s)
Han, Grace GD
Smith, Brendan D
Xu, Wenshuo
Warner, Jamie H
Grossman, Jeffrey C
Date Issued
2018
Journal
ACS Applied Nano Materials
Publisher
American Chemical Society (ACS)
Version
Author's final manuscript
Abstract
© 2018 American Chemical Society. Nanoscale pore formation on chemical vapor deposition grown monolayer MoS2 is achieved using oxygen plasma etching through a nanoporous silicon mask, creating round pores of â70 nm in diameter. The microscale areas with high porosity were successfully patterned via the usage of silicon masks. Thermal annealing in air after the pore formation in the monolayers results in the gradual enlargement of the pores, providing an effective method of controlling edge-to-area ratio of MoS2 crystals. The photoluminescence of the nanoporous MoS2 exhibits rapid increase and blue-shift due to facile p-doping during the thermal annealing process compared to pristine MoS2. This method of fabricating porous transition metal dichalcogenide layers with controlled edge densities presents opportunities in various applications that require atomically thin nanomaterials with controlled pore density and edge sites, such as filtration, electrocatalysis, and sensing.
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
10.1021/ACSANM.8B00707
