Terahertz Field-Induced Reemergence of Quenched Photoluminescence in Quantum Dots
Name
2112.08533.pdf
Description
Submitted version
Size
14.12 MB
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Checksum (MD5)
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Author(s)
Shi, Jiaojian
Gao, Frank Y
Zhang, Zhuquan
Utzat, Hendrik
Barotov, Ulugbek
Farahvash, Ardavan
Han, Jinchi
Deschamps, Jude
Baik, Chan-Wook
Cho, Kyung Sang
Date Issued
February 23, 2022
Journal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Shi, Jiaojian, Gao, Frank Y, Zhang, Zhuquan, Utzat, Hendrik, Barotov, Ulugbek et al. 2022. "Terahertz Field-Induced Reemergence of Quenched Photoluminescence in Quantum Dots." Nano Letters, 22 (4).
Version
Original manuscript
Abstract
The continuous and concerted development of colloidal quantum dot light-emitting diodes over the past two decades has established them as a bedrock technology for the next generation of displays. However, a fundamental issue that limits the performance of these devices is the quenching of photoluminescence due to excess charges from conductive charge transport layers. Although device designs have leveraged various workarounds, doing so often comes at the cost of limiting efficient charge injection. Here we demonstrate that high-field terahertz (THz) pulses can dramatically brighten quenched QDs on metallic surfaces, an effect that persists for minutes after THz irradiation. This phenomenon is attributed to the ability of the THz field to remove excess charges, thereby reducing trion and nonradiative Auger recombination. Our findings show that THz technologies can be used to suppress and control such undesired nonradiative decay, potentially in a variety of luminescent materials for future device applications.
MIT Department
Massachusetts Institute of Technology. Department of Chemistry
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1021/acs.nanolett.1c04873
