Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes
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Buonassisi_Extended infrared.pdf
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Author(s)
Sullivan, Joseph Timothy
Buonassisi, Tonio
Said, Aurore J.
Recht, Daniel
Warrender, Jeffrey M.
Persans, Peter D.
Aziz, Michael J.
Date Issued
August 2011
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Said, Aurore J. et al. “Extended Infrared Photoresponse and Gain in Chalcogen-supersaturated Silicon Photodiodes.” Applied Physics Letters 99.7 (2011): 073503. © 2011 American Institute of Physics
Version
Final published version
Abstract
Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain.
MIT Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1063/1.3609871
