Radiation effects in MIT Lincoln Lab 3DIC technology
Name
Gouker-2009-Radiation effects in MIT Lincoln Lab 3DIC technology.pdf
Size
431.71 KB
Format
Adobe PDF
Checksum (MD5)
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Author(s)
Gouker, Pascale M.
Wyatt, Peter W.
Yost, Donna-Ruth W.
Chen, Chenson K.
Chen, Chang-Lee
Knecht, Jeffrey M.
Keast, Craig L.
Date Issued
November 2009
Journal
2009 IEEE International SOI Conference
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.
MIT Department
Lincoln Laboratory
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1109/SOI.2009.5318752
