Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
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Fitzgerald_Heteroepitaxial growth.pdf
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2.15 MB
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Author(s)
Kohen, David
Nguyen, Xuan Sang
Yadav, Sachin
Kumar, Annie
Made, Riko I
Heidelberger, Christopher
Gong, Xiao
Lee, Kwang Hong
Lee, Kenneth Eng Kian
Yeo, Yee Chia
Date Issued
August 2016
Journal
AIP Advances
Publisher
American Institute of Physics (AIP)
Citation
Kohen, David, et al. “Heteroepitaxial Growth of In[subscript 0.30]Ga[subscript 0.70] As High-Electron Mobility Transistor on 200 Mm Silicon Substrate Using Metamorphic Graded Buffer.” AIP Advances, vol. 6, no. 8, Aug. 2016, p. 085106.
Version
Final published version
Abstract
We report on the growth of an In[subscript 0.30]Ga[subscript 0.70]As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10[superscript 7]cm[subscript -2] with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I[subscript DS] of 70 μA/μm and g[subscript m] of above 60 μS/μm, demonstrating the high quality of the grown materials.
MIT Department
Lincoln Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Creative Commons Attribution 4.0 International License
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DOI of Published Version
https://doi.org/10.1063/1.4961025
