N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
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Chung-2009-N-Face GaN_AlGaN HEM.pdf
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374.05 KB
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Checksum (MD5)
dea87a31a8dbe124c11ae176ea451f38
Author(s)
Chung, Jinwook
Piner, Edwin L.
Palacios, Tomas
Date Issued
January 2009
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W., E.L. Piner, and T. Palacios. “N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology.” Electron Device Letters, IEEE 30.2 (2009): 113-116. © 2009 Institute of Electrical and Electronics Engineers
Version
Final published version
Abstract
We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu[subscript e] = 1670 cm[superscript 2]/Vmiddots, n[subscript s] = 1.6 times 10[superscript 13]/ cm[superscript 2], and R[subscript sh] = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f[subscript T] = 10.7 GHz middotmum and f[subscript max] = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices.
Subjects
GaN
N-face GaN
high electron mobility transistor (HEMT)
hydrogen silsesquioxane (HSQ) adhesive bonding
layer transfer
silicon substrate
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Microsystems Technology Laboratories
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Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/LED.2008.2010415
