Hot Carrier-Assisted Intrinsic Photoresponse in Graphene
Name
Jarillo_Hot carrier.pdf
Size
497.72 KB
Format
Adobe PDF
Checksum (MD5)
7a144a8a6fe109c93b690a0431e3c9aa
Author(s)
Gabor, Nathaniel M.
Song, Justin Chien Wen
Ma, Qiong
Nair, Nityan L.
Taychatanapat, Thiti
Levitov, Leonid
Jarillo-Herrero, Pablo
Watanabe, Kenji
Taniguchi, Takashi
Date Issued
October 2011
Journal
Science
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Gabor, N. M., J. C. W. Song, Q. Ma, N. L. Nair, T. Taychatanapat, K. Watanabe, T. Taniguchi, L. S. Levitov, and P. Jarillo-Herrero. “Hot Carrier-Assisted Intrinsic Photoresponse in Graphene.” Science 334, no. 6056 (November 4, 2011): 648–652.
Version
Original manuscript
Abstract
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier–assisted thermoelectric technologies for efficient solar energy harvesting.
MIT Department
Massachusetts Institute of Technology. Department of Physics
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1126/science.1211384
