Atomistic Simulations of Metallic Cluster Coalescence
Name
AMMNS003.pdf
Size
42.57 KB
Format
Adobe PDF
Checksum (MD5)
c259a7e36213ff8dcd3aecadf721a6a9
Author(s)
Takahashi, A. R.
Thompson, Carl V.
Carter, W. Craig
Date Issued
January 2002
Series/Report no.
Advanced Materials for Micro- and Nano-Systems (AMMNS);
Abstract
A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics to examine the behavior of clusters of atoms both in free space and on substrates. Continuum treatments used in previous models may not be applicable at small length scales or low dimensionality. In atomistic simulations, the effects of surface diffusion, bond straining and defect formation can be directly studied. TEM experiments will be used to evaluate the validity of the simulation model.
Subjects
modeling
simulation
stress
thin films
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