In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide
Name
acsami.8b13428.pdf
Description
Accepted version
Size
8.94 MB
Format
Adobe PDF
Checksum (MD5)
c24c36e7389fe7d622c120f6f8ecfbe1
Author(s)
Gao, Zhenfei
Ji, Qingqing
Shen, Pin-Chun
Han, Yimo
Leong, Wei Sun
Mao, Nannan
Zhou, Lin
Su, Cong
Niu, Jin
Ji, Xiang
Date Issued
September 2018
Journal
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Citation
Gao, Zhenfei et al. "In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide." ACS Applied Materials & Interfaces 10, 40 (September 2018): 34401-34408 © 2018 American Chemical Society
Version
Author's final manuscript
Abstract
Semimetallic-layered transition-metal dichalcogenides, such as TiS2, can serve as a platform material for exploring novel physics modulated by dimensionality, as well as for developing versatile applications in electronics and thermoelectrics. However, controlled synthesis of ultrathin TiS2 in a dry-chemistry way has yet to be realized because of the high oxophilicity of active Ti precursors. Here, we report the ambient pressure chemical vapor deposition (CVD) method to grow large-size, highly crystalline two-dimensional (2D) TiS2 nanosheets through in situ generating titanium chloride as the gaseous precursor. The addition of NH4Cl promoter can react with Ti powders and switch the solid-phase sulfurization reaction into a CVD process, thus enabling the controllability over the size, shape, and thickness of the TiS2 nanosheets via tuning the synthesis conditions. Interestingly, this semimetallic 2D material exhibits near-infrared surface plasmon resonance absorption and a memristor-like electrical behavior, both holding promise for further application developments. Our method hence opens a new avenue for the CVD growth of 2D metal dichalcogenides directly from metal powders and pave the way for exploring their intriguing properties and applications.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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DOI of Published Version
https://doi.org/10.1021/acsami.8b13428
