Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors
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Ahn-2010-Evanescent Coupling.pdf
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1022.49 KB
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Author(s)
Ahn, Donghwan
Kimerling, Lionel C.
Michel, Jurgen
Date Issued
December 2010
Journal
Journal of Lightwave Technology
Publisher
Institute of Electrical and Electronics Engineers
Citation
Donghwan Ahn, L.C. Kimerling, and J. Michel. “Evanescent Coupling Device Design for Waveguide-Integrated Group IV Photodetectors.” Lightwave Technology, Journal of 28.23 (2010): 3387-3394. © 2010 IEEE.
Version
Final published version
Abstract
We have fabricated vertical p-i-n silicon photodetectors that are monolithically integrated with compact silicon-oxynitride channel waveguides. By comparing the evanescent coupling from low index-contrast waveguides and compact, high index-contrast waveguides, the dependence of evanescent coupling behavior on the waveguide index and geometry designs was analyzed. The effects of fabrication variations in the coupling structure have been studied and it was found that an offsetting step in the waveguide can help compensate for the mode mismatch at the transition interface from the input bus waveguide to the waveguide on top of the photodetector. Finally, we present a design map, built by drawing the evanescent coupling rate contour lines in the waveguide design space, which well predicts the evanescent coupling trends.
MIT Department
MIT Materials Research Laboratory
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1109/jlt.2010.2086433
