Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
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Taychatanapat-2010-Electronic Transport.pdf
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Author(s)
Taychatanapat, Thiti
Jarillo-Herrero, Pablo
Date Issued
October 2010
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Taychatanapat, Thiti and Pablo Jarillo-Herrero. "Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields." Physical Review Letters 105.16 (2010): 166601. © 2010 The American Physical Society
Version
Final published version
Abstract
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.
MIT Department
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1103/PhysRevLett.105.166601
