Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices
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Wang-2009-Breakdown Voltage fo.pdf
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Author(s)
Wang, Han
Napoli, Ettore
Udrea, Florin
Date Issued
November 2009
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Han Wang, E. Napoli, and F. Udrea. “Breakdown Voltage for Superjunction Power Devices With Charge Imbalance: An Analytical Model Valid for Both Punch Through and Non Punch Through Devices.” Electron Devices, IEEE Transactions on 56.12 (2009): 3175-3183.© 2009 Institute of Electrical and Electronics Engineers.
Version
Final published version
Abstract
An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponential model is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results.
Subjects
superjunction (SJ)
semiconductor device modeling
power semiconductor devices
charge imbalance (C.I.)
SJ modeling
Analytical model
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
http://dx.doi.org/10.1109/ted.2009.2032595
