Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well
Name
PhysRevB.97.125410.pdf
Size
1.94 MB
Format
Adobe PDF
Checksum (MD5)
d98cff4691943e80af680bf4feb98599
Author(s)
Anghel, S.
Passmann, F.
Ruppert, C.
Poshakinskiy, A. V.
Tarasenko, S. A.
Moore, J. N.
Yusa, G.
Mano, T.
Noda, T.
Li, X.
Date Issued
March 2018
Journal
Physical Review B
Publisher
American Physical Society
Citation
Anghel, S. et al. "Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well." Physical Review B 97, 12 (March 2018): 125410 © 2018 American Physical Society
Version
Final published version
Abstract
Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λ[subscript SOI] is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λ[subscript SOI] through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λ[subscript SOI] and diffusion coefficient.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Terms of Use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Persistent DSpace Link
DOI of Published Version
https://doi.org/10.1103/PhysRevB.97.125410
