Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode
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021101_1_5.0189570.pdf
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Published version
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5.44 MB
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5c64d13158c948b6989f521a33eb478f
Author(s)
Akamatsu, Shoma
Lee, Byung Hun
Hou, Yasen
Tsunoda, Masakiyo
Oogane, Mikihiko
Beach, Geoffrey SD
Moodera, Jagadeesh S
Date Issued
February 1, 2024
Journal
APL Materials
Publisher
AIP Publishing
Citation
Shoma Akamatsu, Byung Hun Lee, Yasen Hou, Masakiyo Tsunoda, Mikihiko Oogane, Geoffrey S. D. Beach, Jagadeesh S. Moodera; Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode. APL Mater. 1 February 2024; 12 (2): 021101.
Version
Final published version
Abstract
We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties. We found that the temperature and bias voltage dependences of the TMR effect in FeAlSi-MTJs were almost the same as MTJs with Fe free layers despite the low Curie temperature of FeAlSi. In the inelastic electron tunneling spectroscopy measured at low temperatures, the relatively large cutoff energy of magnon excitation at the FeAlSi and MgO interface was confirmed. In addition, we studied for the first time the exchange stiffness constant of FeAlSi films by Brillouin light scattering. The determined value of the stiffness constant of FeAlSi was 14.3 (pJ/m), which was similar to that of Fe. Both the large magnon cutoff at the interface and the stiffness constant of FeAlSi are considered to be the reason for the good temperature and voltage dependences of FeAlSi-MTJs.
MIT Department
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
Massachusetts Institute of Technology. Plasma Science and Fusion Center
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Physics
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DOI of Published Version
https://doi.org/10.1063/5.0189570
